题目内容

For a MOS at high frequency, the inversion layer charge will not respond to a differential change in capacitor voltage.

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The depletion-type MOSFET devices are ___________

A. The creation of the inversion layer charge
B. The creation of the accumulation layer charge
C. A channel already exists at threshold gate voltage
D. A channel already exists at zero gate voltage

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Two basic frequency limitation factors in MOSFET are ________

A. Surface states
B. Fixed charge in oxide layers
Channel transit time
D. Gate or capacitance charging time

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Under certain conditions, avalanche breakdown may occur in the p-well to n substrate junction, driving both MOS into saturation. This condition is called latch-up, which can sustain itself by positive feedback. In latch-up condition, there is _________

A. low current, low voltage
B. high current, high voltage
C. low current, high voltage
D. high current, low voltage

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Ideally, a change in gate voltage on approximately ______ produces an order of magnitude change in the subthreshold current.

A. 30 mV
B. 40 mV
C. 50 mV
D. 60 mV

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