题目内容

Ideally, a change in gate voltage on approximately ______ produces an order of magnitude change in the subthreshold current.

A. 30 mV
B. 40 mV
C. 50 mV
D. 60 mV

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As the MOSFET dimensions become smaller, the channel length modulation becomes _______.

A. Less severe
B. more severe
C. disappeared
D. negligible

Typical ID versus VDS curves are __________ in the saturation region due to channel length modulation.

A. With positive slopes
B. With negative slopes
Constants
D. Variable

The effective carrier mobility decreases and reaches the velocity saturation because ______

A. Surface scattering
B. Positive fixed oxide charge
Coulomb interaction
D. Lattice scattering

The effective mobility is independent from oxide thickness. ()