题目内容
Under certain conditions, avalanche breakdown may occur in the p-well to n substrate junction, driving both MOS into saturation. This condition is called latch-up, which can sustain itself by positive feedback. In latch-up condition, there is _________
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Ideally, a change in gate voltage on approximately ______ produces an order of magnitude change in the subthreshold current.
As the MOSFET dimensions become smaller, the channel length modulation becomes _______.
Typical ID versus VDS curves are __________ in the saturation region due to channel length modulation.
The effective carrier mobility decreases and reaches the velocity saturation because ______
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