题目内容

The depletion-type MOSFET devices are ___________

A. The creation of the inversion layer charge
B. The creation of the accumulation layer charge
C. A channel already exists at threshold gate voltage
D. A channel already exists at zero gate voltage

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Two basic frequency limitation factors in MOSFET are ________

A. Surface states
B. Fixed charge in oxide layers
Channel transit time
D. Gate or capacitance charging time

Under certain conditions, avalanche breakdown may occur in the p-well to n substrate junction, driving both MOS into saturation. This condition is called latch-up, which can sustain itself by positive feedback. In latch-up condition, there is _________

A. low current, low voltage
B. high current, high voltage
C. low current, high voltage
D. high current, low voltage

Ideally, a change in gate voltage on approximately ______ produces an order of magnitude change in the subthreshold current.

A. 30 mV
B. 40 mV
C. 50 mV
D. 60 mV

As the MOSFET dimensions become smaller, the channel length modulation becomes _______.

A. Less severe
B. more severe
C. disappeared
D. negligible

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