题目内容

Two basic frequency limitation factors in MOSFET are ________

A. Surface states
B. Fixed charge in oxide layers
Channel transit time
D. Gate or capacitance charging time

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Under certain conditions, avalanche breakdown may occur in the p-well to n substrate junction, driving both MOS into saturation. This condition is called latch-up, which can sustain itself by positive feedback. In latch-up condition, there is _________

A. low current, low voltage
B. high current, high voltage
C. low current, high voltage
D. high current, low voltage

Ideally, a change in gate voltage on approximately ______ produces an order of magnitude change in the subthreshold current.

A. 30 mV
B. 40 mV
C. 50 mV
D. 60 mV

As the MOSFET dimensions become smaller, the channel length modulation becomes _______.

A. Less severe
B. more severe
C. disappeared
D. negligible

Typical ID versus VDS curves are __________ in the saturation region due to channel length modulation.

A. With positive slopes
B. With negative slopes
Constants
D. Variable

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