题目内容

The C-V curve of a MOS capacitor with a p-type substrate at high frequency will ______when there is the fixed positive oxide charge.

A. Shift to the positive gate voltage direction
B. Shift to the negative gate voltage direction
C. Smear out
D. remain the same

查看答案

搜索结果不匹配？点我反馈

更多问题

For a MOS at high frequency, the inversion layer charge will not respond to a differential change in capacitor voltage.

The depletion-type MOSFET devices are ___________

A. The creation of the inversion layer charge
B. The creation of the accumulation layer charge
C. A channel already exists at threshold gate voltage
D. A channel already exists at zero gate voltage

查看答案

Two basic frequency limitation factors in MOSFET are ________

A. Surface states
B. Fixed charge in oxide layers
Channel transit time
D. Gate or capacitance charging time

查看答案

Under certain conditions, avalanche breakdown may occur in the p-well to n substrate junction, driving both MOS into saturation. This condition is called latch-up, which can sustain itself by positive feedback. In latch-up condition, there is _________

A. low current, low voltage
B. high current, high voltage
C. low current, high voltage
D. high current, low voltage

查看答案

The C-V curve of a MOS capacitor with a p-type substrate at high frequency will ______when there is the fixed positive oxide charge.

A. Shift to the positive gate voltage direction B. Shift to the negative gate voltage direction C. Smear out D. remain the same

For a MOS at high frequency, the inversion layer charge will not respond to a differential change in capacitor voltage.

The depletion-type MOSFET devices are ___________

Two basic frequency limitation factors in MOSFET are ________

Under certain conditions, avalanche breakdown may occur in the p-well to n substrate junction, driving both MOS into saturation. This condition is called latch-up, which can sustain itself by positive feedback. In latch-up condition, there is _________

A. Shift to the positive gate voltage direction
B. Shift to the negative gate voltage direction
C. Smear out
D. remain the same