题目内容

As the MOSFET dimensions become smaller, the channel length modulation becomes _______.

A. Less severe
B. more severe
C. disappeared
D. negligible

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Typical ID versus VDS curves are __________ in the saturation region due to channel length modulation.

A. With positive slopes
B. With negative slopes
Constants
D. Variable

The effective carrier mobility decreases and reaches the velocity saturation because ______

A. Surface scattering
B. Positive fixed oxide charge
Coulomb interaction
D. Lattice scattering

The effective mobility is independent from oxide thickness. ()

The two reasons why the mobility is not any more a constant in the real devices are _____

A. The variation with gate voltage
B. The variation with drain-source voltage
C. The limitation from the velocity saturation
D. The limitation from the operation frequency

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