题目内容

As the MOSFET dimensions become smaller, the channel length modulation becomes _______.

A. Less severe
B. more severe
C. disappeared
D. negligible

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Typical ID versus VDS curves are __________ in the saturation region due to channel length modulation.

A. With positive slopes
B. With negative slopes
Constants
D. Variable

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The effective carrier mobility decreases and reaches the velocity saturation because ______

A. Surface scattering
B. Positive fixed oxide charge
Coulomb interaction
D. Lattice scattering

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The effective mobility is independent from oxide thickness. ()

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The two reasons why the mobility is not any more a constant in the real devices are _____

A. The variation with gate voltage
B. The variation with drain-source voltage
C. The limitation from the velocity saturation
D. The limitation from the operation frequency

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As the MOSFET dimensions become smaller, the channel length modulation becomes _______.

A. Less severe B. more severe C. disappeared D. negligible

Typical ID versus VDS curves are __________ in the saturation region due to channel length modulation.

The effective carrier mobility decreases and reaches the velocity saturation because ______

The effective mobility is independent from oxide thickness. ()

The two reasons why the mobility is not any more a constant in the real devices are _____

A. Less severe
B. more severe
C. disappeared
D. negligible