题目内容

When the interface states are present, the C-V curve of a MOS capacitor will ________

A. shift to the positive gate voltage direction
B. shift to the negative gate voltage direction
C. smear out
D. remain the same

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For a MOS, a frequency with a value on the order of 1MHz is a low frequency.

The C-V curve of a MOS capacitor with a p-type substrate at high frequency will ______when there is the fixed positive oxide charge.

A. Shift to the positive gate voltage direction
B. Shift to the negative gate voltage direction
C. Smear out
D. remain the same

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For a MOS at high frequency, the inversion layer charge will not respond to a differential change in capacitor voltage.

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The depletion-type MOSFET devices are ___________

A. The creation of the inversion layer charge
B. The creation of the accumulation layer charge
C. A channel already exists at threshold gate voltage
D. A channel already exists at zero gate voltage

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When the interface states are present, the C-V curve of a MOS capacitor will ________

A. shift to the positive gate voltage direction B. shift to the negative gate voltage direction C. smear out D. remain the same

For a MOS, a frequency with a value on the order of 1MHz is a low frequency.

The C-V curve of a MOS capacitor with a p-type substrate at high frequency will ______when there is the fixed positive oxide charge.

For a MOS at high frequency, the inversion layer charge will not respond to a differential change in capacitor voltage.

The depletion-type MOSFET devices are ___________

A. shift to the positive gate voltage direction
B. shift to the negative gate voltage direction
C. smear out
D. remain the same