The basic working principle of bipolar transistor is that the collector current is controlled by the ( ) voltage.
A. base–collector
B. collector–emitter
C. base–emitter
D. base–ground
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Schottky-clamped transistor is a normal npn bipolar device with a Schottky diode connected between ( ) and ( ).
A. base;collector
B. base;emitter
C. collector;emitter
D. ground;base
For the ideal C-V characteristics of the MOS capacitor, three operation conditions are ( ).
Accumulation
B. Depletion
C. Turn-on
D. Inversion
For the MOS with a p-type substrate, if a negative gate bias is applied, ( ) forms at the oxide/semiconductor interface.
An accumulation layer
B. An induced space charge region
C. A negative charged layer
D. No layer
The basic MOSFET device types are ( ).
A. n-channel enhancement mode MOSFET
B. n-channel depletion mode MOSFET
C. p-channel enhancement mode MOSFET
D. p-channel depletion mode MOSFET