题目内容
Schottky-clamped transistor is a normal npn bipolar device with a Schottky diode connected between ( ) and ( ).
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For the ideal C-V characteristics of the MOS capacitor, three operation conditions are ( ).
For the MOS with a p-type substrate, if a negative gate bias is applied, ( ) forms at the oxide/semiconductor interface.
The basic MOSFET device types are ( ).
There are three basic types of transistor ( ).
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