For the MOS with a p-type substrate, if a negative gate bias is applied, ( ) forms at the oxide/semiconductor interface.
An accumulation layer
B. An induced space charge region
C. A negative charged layer
D. No layer
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The basic MOSFET device types are ( ).
A. n-channel enhancement mode MOSFET
B. n-channel depletion mode MOSFET
C. p-channel enhancement mode MOSFET
D. p-channel depletion mode MOSFET
There are three basic types of transistor ( ).
A. PIN photodiode
Bipolar transistor
C. MOSFET
D. Junction field effect transistor
The barrier capacitance of P+N junction is mainly affected by the doping concentration of N region. ()
The ideal current of pn junction is related to ()
A. Reverse saturation current density
B. Applied voltage
C. Temperature
D. Minority carrier concentration
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