题目内容

The basic MOSFET device types are ( ).

A. n-channel enhancement mode MOSFET
B. n-channel depletion mode MOSFET
C. p-channel enhancement mode MOSFET
D. p-channel depletion mode MOSFET

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There are three basic types of transistor ( ).

A. PIN photodiode
Bipolar transistor
C. MOSFET
D. Junction field effect transistor

The barrier capacitance of P+N junction is mainly affected by the doping concentration of N region. ()

The ideal current of pn junction is related to ()

A. Reverse saturation current density
B. Applied voltage
C. Temperature
D. Minority carrier concentration

With increasing reverse bias, space charge width keeps ()

A. increase
B. decrease
C. unchanged
D. no relationship

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