题目内容

Four assumptions in ideal current-voltage relationship are ()

Abrupt approximation of depletion layer
B. Small injection hypothesis
Current in pn junction is equal at anywhere
D. Both electron and hole currents are constant in the depletion layer

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The space charge width of the metal semiconductor contact is inversely proportional to the semiconductor doping concentration. ( )

The high electron mobility of 2D electron gas results from that electrons in the potential well are separated from the ionized impurities. ( )

For a MOS capacitor at flat band, the voltage across oxide is always zero. () Because there exists work function difference and possible trapped charge.

In the depletion condition of the MOS, when the space charge width increases, the total capacitance will ________

A. Increase
Be the same
C. Decrease
D. Be positive