题目内容

In the depletion condition of the MOS, when the space charge width increases, the total capacitance will ________

A. Increase
Be the same
C. Decrease
D. Be positive

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In the ________ condition of the MOS, the differential changes in charge density occur at the edges of the oxide, as in a parallel-plate capacitor

Accumulation
B. Depletion
C. Inversion
D. Flat band

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In a MOS with a p-type substrate, two sources of electrons changing the charge density of inversion layer are ________

A. Diffusion of minority carrier electrons from the substrate across the space charge region
B. Diffusion of electrons from the metal
C. Thermal generation of electron-hole pairs within the space charge region
D. Therma generation of electron-hole pairs within the oxide

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When the interface states are present, the C-V curve of a MOS capacitor will ________

A. shift to the positive gate voltage direction
B. shift to the negative gate voltage direction
C. smear out
D. remain the same

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For a MOS, a frequency with a value on the order of 1MHz is a low frequency.

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In the depletion condition of the MOS, when the space charge width increases, the total capacitance will ________

A. Increase Be the same C. Decrease D. Be positive

In the ________ condition of the MOS, the differential changes in charge density occur at the edges of the oxide, as in a parallel-plate capacitor

In a MOS with a p-type substrate, two sources of electrons changing the charge density of inversion layer are ________

When the interface states are present, the C-V curve of a MOS capacitor will ________

For a MOS, a frequency with a value on the order of 1MHz is a low frequency.

A. Increase
Be the same
C. Decrease
D. Be positive