The high electron mobility of 2D electron gas results from that electrons in the potential well are separated from the ionized impurities. ( )
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For a MOS capacitor at flat band, the voltage across oxide is always zero. () Because there exists work function difference and possible trapped charge.
In the depletion condition of the MOS, when the space charge width increases, the total capacitance will ________
A. Increase
Be the same
C. Decrease
D. Be positive
In the ________ condition of the MOS, the differential changes in charge density occur at the edges of the oxide, as in a parallel-plate capacitor
Accumulation
B. Depletion
C. Inversion
D. Flat band
In a MOS with a p-type substrate, two sources of electrons changing the charge density of inversion layer are ________
A. Diffusion of minority carrier electrons from the substrate across the space charge region
B. Diffusion of electrons from the metal
C. Thermal generation of electron-hole pairs within the space charge region
D. Therma generation of electron-hole pairs within the oxide