题目内容
The space charge width of the metal semiconductor contact is inversely proportional to the semiconductor doping concentration. ( )
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The high electron mobility of 2D electron gas results from that electrons in the potential well are separated from the ionized impurities. ( )
For a MOS capacitor at flat band, the voltage across oxide is always zero. () Because there exists work function difference and possible trapped charge.
In the depletion condition of the MOS, when the space charge width increases, the total capacitance will ________
In the ________ condition of the MOS, the differential changes in charge density occur at the edges of the oxide, as in a parallel-plate capacitor
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