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The common-emitter current gain decreases with high injection.( )

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Ion implantation can change an enhancement-mode device to depletion-mode, while can’t change depletion-mode device to an enhancement-mode device.( )

An implant of acceptor ions into either a p- or n-type substrate will shift the threshold voltage to more positive values, while an implant of donor ions will shift the threshold voltage to more negative values.( )

The narrow-channel and short-channel devices both produce a smaller threshold voltage in n-channel MOSFETs.( )

The channel length modulation, velocity saturation and ballistic transport are more likely to occur in short-channel MOSFET devices.( )