题目内容
The narrow-channel and short-channel devices both produce a smaller threshold voltage in n-channel MOSFETs.( )
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The channel length modulation, velocity saturation and ballistic transport are more likely to occur in short-channel MOSFET devices.( )
The effective inversion charge mobility is dependent of the electric field at the inversion layer and temperature.( )
The surface scattering effect increases the electron mobility in the inversion layer in n channel MOSFET.( )
The voltage breakdown mechanisms in the semiconductor junctions include ( ) in the MOSFET.
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