题目内容

The channel length modulation, velocity saturation and ballistic transport are more likely to occur in short-channel MOSFET devices.( )

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The effective inversion charge mobility is dependent of the electric field at the inversion layer and temperature.( )

The surface scattering effect increases the electron mobility in the inversion layer in n channel MOSFET.( )

The voltage breakdown mechanisms in the semiconductor junctions include ( ) in the MOSFET.

A. oxide breakdown
B. avalanche breakdown
C. near avalanche and snapback breakdown
D. near punch-through effects

If donor atoms were implanted into the p-type substrate, the space charge density and would be( ); thus, the threshold voltage would shift in the( )voltage direction. Which option is true for the description.( )

A. reduced, negative
B. increased, negative
C. reduced, positive
D. increased, positive