题目内容

The actual implant dose versus distance is either a delta function or a step function. ()

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The snapback breakdown (S-shape) effect of the current–voltage characteristic can be explained by using the parasitic bipolar transistor. ()

The voltage breakdown mechanism includes ___________

A. Oxide breakdown
B. Avalanche Breakdown
C. Near avalanche and snapback breakdown
D. Near punch-through effects

____________ is the condition at which the drain-to-substrate space charge region extends completely across the channel region to the source-to-substrate space charge region.

A. Punch-through
B. Drain-Induced Barrier Lowering
C. Near punch-through
D. Near Avalanche

Ion implantation is only used for doping the channel. ()