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Ion implantation is only used for doping the channel. ()

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According to the distribution of implanted ions, two approximations are discussed _______

A. Delta function distribution
B. Gamma distribution
C. step junction
D. linearly graded junction

We want as many electrons as possible to reach the collector without recombining with any majority carrier holes in the base. Therefore, the width of the base needs to be large compared with the minority carrier diffusion length. ()

For the forward-active operating mode of an npn bipolar transistor (common base), the B-E junction and B-C junction are and ___ biased, respectively.

A. forward; forward
B. forward; reverse
C. reverse; forward
D. reverse; reverse

Ideally, the minority carrier electron concentration in the base is a linear function of distance, which implies ___________.

A. enough diffusion
B. no diffusion
C. enough recombination
D. no recombination