题目内容

____________ is the condition at which the drain-to-substrate space charge region extends completely across the channel region to the source-to-substrate space charge region.

A. Punch-through
B. Drain-Induced Barrier Lowering
C. Near punch-through
D. Near Avalanche

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Ion implantation is only used for doping the channel. ()

According to the distribution of implanted ions, two approximations are discussed _______

A. Delta function distribution
B. Gamma distribution
C. step junction
D. linearly graded junction

We want as many electrons as possible to reach the collector without recombining with any majority carrier holes in the base. Therefore, the width of the base needs to be large compared with the minority carrier diffusion length. ()

For the forward-active operating mode of an npn bipolar transistor (common base), the B-E junction and B-C junction are and ___ biased, respectively.

A. forward; forward
B. forward; reverse
C. reverse; forward
D. reverse; reverse