题目内容
The snapback breakdown (S-shape) effect of the current–voltage characteristic can be explained by using the parasitic bipolar transistor. ()
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The voltage breakdown mechanism includes ___________
____________ is the condition at which the drain-to-substrate space charge region extends completely across the channel region to the source-to-substrate space charge region.
Ion implantation is only used for doping the channel. ()
According to the distribution of implanted ions, two approximations are discussed _______
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