题目内容

The property of one-sided step junction is ()

A. The width of depletion layer is mainly on the light doped side
B. The width of depletion layer is mainly on the heavy doped side
C. The build-in voltage is mainly on the light doped side
D. The build-in voltage is mainly on the heavy doped side

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Four assumptions in ideal current-voltage relationship are ()

Abrupt approximation of depletion layer
B. Small injection hypothesis
Current in pn junction is equal at anywhere
D. Both electron and hole currents are constant in the depletion layer

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The space charge width of the metal semiconductor contact is inversely proportional to the semiconductor doping concentration. ( )

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The high electron mobility of 2D electron gas results from that electrons in the potential well are separated from the ionized impurities. ( )

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For a MOS capacitor at flat band, the voltage across oxide is always zero. () Because there exists work function difference and possible trapped charge.

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The property of one-sided step junction is ()

A. The width of depletion layer is mainly on the light doped side B. The width of depletion layer is mainly on the heavy doped side C. The build-in voltage is mainly on the light doped side D. The build-in voltage is mainly on the heavy doped side

Four assumptions in ideal current-voltage relationship are ()

The space charge width of the metal semiconductor contact is inversely proportional to the semiconductor doping concentration. ( )

The high electron mobility of 2D electron gas results from that electrons in the potential well are separated from the ionized impurities. ( )

For a MOS capacitor at flat band, the voltage across oxide is always zero. () Because there exists work function difference and possible trapped charge.

A. The width of depletion layer is mainly on the light doped side
B. The width of depletion layer is mainly on the heavy doped side
C. The build-in voltage is mainly on the light doped side
D. The build-in voltage is mainly on the heavy doped side