题目内容

The effective carrier mobility decreases and reaches the velocity saturation because ______

A. Surface scattering
B. Positive fixed oxide charge
Coulomb interaction
D. Lattice scattering

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The effective mobility is independent from oxide thickness. ()

The two reasons why the mobility is not any more a constant in the real devices are _____

A. The variation with gate voltage
B. The variation with drain-source voltage
C. The limitation from the velocity saturation
D. The limitation from the operation frequency

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The saturation velocity will decrease somewhat with applied VG because of the and __

A. lateral electric field
B. vertical electric field
C. surface scattering
D. lattice scattering

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Compared to that in long-channel devices, velocity saturation will be __________in shorter channel devices.

A. less prominent
B. the same
C. more prominent
D. disappeared

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The effective carrier mobility decreases and reaches the velocity saturation because ______

A. Surface scattering B. Positive fixed oxide charge Coulomb interaction D. Lattice scattering

The effective mobility is independent from oxide thickness. ()

The two reasons why the mobility is not any more a constant in the real devices are _____

The saturation velocity will decrease somewhat with applied VG because of the ________ and __________

Compared to that in long-channel devices, velocity saturation will be __________in shorter channel devices.

A. Surface scattering
B. Positive fixed oxide charge
Coulomb interaction
D. Lattice scattering

The saturation velocity will decrease somewhat with applied VG because of the and __