The description ( ) is not right for the Equivalent Circuit Models used to analyze a transistor circuit.
A. E-M (Ebers-Moll) model is used in switching applications
B. G-P (Gummel-Poon) model is used for nonuniform doping concentration in the base and emitter
C. Amplification usually involves superimposing sinusoidal signals on dc values and turning a transistor from its “off” state to forward-active.
D. H-P (Hybrid-Pi) model is used in amplification applications
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The total emitter-to-collector time constant or delay time is composed of several separate time constants, including ( ).
A. emitter–base junction capacitance charging time
B. base transit time
C. collector depletion region transit time
D. collector capacitance charging time
The ratio of collector current to emitter current and the ratio of collector current to base current both are constant for an npn bipolar transistor biased in the forward-active mode.( )
Considering the base width modulation, the base width is a function of the B-C voltage. As the B-C reverse-biased voltage increases, the B-C space charge region width increases, which increases the base width.( )
The common-emitter current gain decreases with high injection.( )