The ratio of collector current to emitter current and the ratio of collector current to base current both are constant for an npn bipolar transistor biased in the forward-active mode.( )
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Considering the base width modulation, the base width is a function of the B-C voltage. As the B-C reverse-biased voltage increases, the B-C space charge region width increases, which increases the base width.( )
The common-emitter current gain decreases with high injection.( )
Ion implantation can change an enhancement-mode device to depletion-mode, while can’t change depletion-mode device to an enhancement-mode device.( )
An implant of acceptor ions into either a p- or n-type substrate will shift the threshold voltage to more positive values, while an implant of donor ions will shift the threshold voltage to more negative values.( )