The total emitter-to-collector time constant or delay time is composed of several separate time constants, including ( ).
A. emitter–base junction capacitance charging time
B. base transit time
C. collector depletion region transit time
D. collector capacitance charging time
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The ratio of collector current to emitter current and the ratio of collector current to base current both are constant for an npn bipolar transistor biased in the forward-active mode.( )
Considering the base width modulation, the base width is a function of the B-C voltage. As the B-C reverse-biased voltage increases, the B-C space charge region width increases, which increases the base width.( )
The common-emitter current gain decreases with high injection.( )
Ion implantation can change an enhancement-mode device to depletion-mode, while can’t change depletion-mode device to an enhancement-mode device.( )