题目内容

In a MOS with a p-type substrate, two sources of electrons changing the charge density of inversion layer are ________

A. Diffusion of minority carrier electrons from the substrate across the space charge region
B. Diffusion of electrons from the metal
C. Thermal generation of electron-hole pairs within the space charge region
D. Therma generation of electron-hole pairs within the oxide

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When the interface states are present, the C-V curve of a MOS capacitor will ________

A. shift to the positive gate voltage direction
B. shift to the negative gate voltage direction
C. smear out
D. remain the same

For a MOS, a frequency with a value on the order of 1MHz is a low frequency.

The C-V curve of a MOS capacitor with a p-type substrate at high frequency will ______when there is the fixed positive oxide charge.

A. Shift to the positive gate voltage direction
B. Shift to the negative gate voltage direction
C. Smear out
D. remain the same

For a MOS at high frequency, the inversion layer charge will not respond to a differential change in capacitor voltage.

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