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Now suppose that the PV module mentioned above is set up using a series connection of solar cells with the above mentioned specifications. Two of the solar cells have gone faulty (completely stop generating power), but fortunately you have bypass diodes connected across the faulty solar cells. Assume that the bypass diodes are ideal (they have a zero voltage drop when conducting).What is the measured open-circuit voltage (in \(V\)) of the above PV module with the faulty solar cells? ______

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A given monocrystalline silicon solar cell has the following specifications:\(I_{sc} = 5A\)\(V_{oc} = 0.6V\)72 identical cells with the above specifications are to be interconnected to create a PV module. What is the open-circuit voltage (in \(V\)) of the PV module if all the solar cells are connected in a series configuration? ______

The current density of an ideal p-n junction under illumination can be described by:\[J(V)=J_{ph}-J_0 ( e^{\frac{qV}{kT}}-1)\]where \(J_{ph}\) is the photocurrent density, \(J_0\) the saturation current density, \(q\) the elementary charge, \(V\) the voltage, \(k\) the Boltzmann's constant, and \(T\) the temperature.A crystalline silicon solar cell generates a photocurrent density of \(J_{ph}=40 mA/cm^2\) at \(T=300K\). The saturation current density is \(J_0=1.95*10^{-10} mA/cm^2\).Assuming that the solar cell behaves as an ideal p-n junction, calculate the open-circuit voltage \(V_{oc}\) (in V). ______

The width of the space charge region at a p-n junction is reduced by applying a voltage bias over the p-n junction. What is the correct statement on both the bias voltage and the p-n junction?

A. The voltage is a forward bias and the diffusion of the majority charge carriers becomes more dominant.
B. The voltage is a reverse bias and the diffusion of the majority charge carriers becomes more dominant.
C. The voltage is a forward bias and the drift of the minority charge carriers becomes more dominant.
D. The voltage is a reverse bias and the drift of the minority charge carriers becomes more dominant.

Which of the following statements is false regarding the ‘drift’ of charge carriers?

A. It is the dominant carrier transport mechanism when an electric field is applied in the semiconductor.
B. Holes move in the direction opposite to that of the applied field.
C. During drift, the carrier transport is characterized by their respective electron/hole mobilities.
During drift, electrons and holes move in opposite directions.

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