The width of the space charge region at a p-n junction is reduced by applying a voltage bias over the p-n junction. What is the correct statement on both the bias voltage and the p-n junction?
A. The voltage is a forward bias and the diffusion of the majority charge carriers becomes more dominant.
B. The voltage is a reverse bias and the diffusion of the majority charge carriers becomes more dominant.
C. The voltage is a forward bias and the drift of the minority charge carriers becomes more dominant.
D. The voltage is a reverse bias and the drift of the minority charge carriers becomes more dominant.
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Which of the following statements is false regarding the ‘drift’ of charge carriers?
A. It is the dominant carrier transport mechanism when an electric field is applied in the semiconductor.
B. Holes move in the direction opposite to that of the applied field.
C. During drift, the carrier transport is characterized by their respective electron/hole mobilities.
During drift, electrons and holes move in opposite directions.
What is the energy payback period in years for the PV module? ______
Assume that the PV module is used in a location where it gives an average annual PV yield of 500 kWh over its lifetime of 20 years.What is the energy yield ratio of the PV module over its lifetime of 20 years? ______
Consider a 250 Wp rated monocrystalline PV module. It results from a manufacturing process that consumes 10kWh/Wp of energy. What is the total energy consumed in kWh during the production of the module? ______