The current density of an ideal p-n junction under illumination can be described by:\[J(V)=J_{ph}-J_0 ( e^{\frac{qV}{kT}}-1)\]where \(J_{ph}\) is the photocurrent density, \(J_0\) the saturation current density, \(q\) the elementary charge, \(V\) the voltage, \(k\) the Boltzmann's constant, and \(T\) the temperature.A crystalline silicon solar cell generates a photocurrent density of \(J_{ph}=40 mA/cm^2\) at \(T=300K\). The saturation current density is \(J_0=1.95*10^{-10} mA/cm^2\).Assuming that the solar cell behaves as an ideal p-n junction, calculate the open-circuit voltage \(V_{oc}\) (in V). ______

A. The voltage is a forward bias and the diffusion of the majority charge carriers becomes more dominant.
B. The voltage is a reverse bias and the diffusion of the majority charge carriers becomes more dominant.
C. The voltage is a forward bias and the drift of the minority charge carriers becomes more dominant.
D. The voltage is a reverse bias and the drift of the minority charge carriers becomes more dominant.

A. It is the dominant carrier transport mechanism when an electric field is applied in the semiconductor.
B. Holes move in the direction opposite to that of the applied field.
C. During drift, the carrier transport is characterized by their respective electron/hole mobilities.
During drift, electrons and holes move in opposite directions.