题目内容

A thin spacer layer of undoped AlGaAs can be placed between the doped AlGaAs and the undoped GaAs to decrease the separation of the electrons and ionized donor impurities,and increased the coulomb attraction. ( )

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IMPATT,i.e. IMPact Avanlanche Transit-Time diode, provides the lowest continuous output power of all the semiconductor microwave devices. ( )

Darlington pair can increase the effective current gain. ( )

In a vertical npn power transistor,a relatively large base width is required to prevent punch-through breakdown. ( )

Which are thyristor device structures? __________

A. Bilateral Thyristor
B. Triac
C. MOS Gated Thyristor
D. MOS Turn-Off Thyristor

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