IMPATT,i.e. IMPact Avanlanche Transit-Time diode, provides the lowest continuous output power of all the semiconductor microwave devices. ( )
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Darlington pair can increase the effective current gain. ( )
In a vertical npn power transistor,a relatively large base width is required to prevent punch-through breakdown. ( )
Which are thyristor device structures? __________
A. Bilateral Thyristor
B. Triac
C. MOS Gated Thyristor
D. MOS Turn-Off Thyristor
Power transistor structures include __________
A. DMOS:double-diffused MOS (DMOS) transistor
B. VMOS:vertical channel MOS (VMOS) transistor
C. HEXFET
D. npn bipolar transistor
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