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In a vertical npn power transistor,a relatively large base width is required to prevent punch-through breakdown. ( )

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Which are thyristor device structures? __________

A. Bilateral Thyristor
B. Triac
C. MOS Gated Thyristor
D. MOS Turn-Off Thyristor

Power transistor structures include __________

A. DMOS:double-diffused MOS (DMOS) transistor
B. VMOS:vertical channel MOS (VMOS) transistor
C. HEXFET
D. npn bipolar transistor

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The transferred-electron phenomenon is demonstrated in a few semiconductors in which conduction electrons in _ are scattered to by a high electric field.

A. a low-mobility band; a high-mobility band
B. a high-mobility band; a low-mobility band
C. the conduction band; the valence band
D. the valence band; the conduction band

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Which is NOT semiconductor microwave device? _________

A. Tunnel Diode
B. GUNN Diode
C. IMPATT Diode
D. Photodiode

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In a vertical npn power transistor,a relatively large base width is required to prevent punch-through breakdown. ( )

Which are thyristor device structures? __________

Power transistor structures include __________

The transferred-electron phenomenon is demonstrated in a few semiconductors in which conduction electrons in ___________ are scattered to __________ by a high electric field.

Which is NOT semiconductor microwave device? _________

The transferred-electron phenomenon is demonstrated in a few semiconductors in which conduction electrons in _ are scattered to by a high electric field.