题目内容
The separation of the majority carriers from the ionized impurities can be achieved in a heterostructure that has an abrupt discontinuity in conduction and valence bands. ( )
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The high electron mobility transistor () fabricated from heterojunctions satisfies the following requirements ____________
A thin spacer layer of undoped AlGaAs can be placed between the doped AlGaAs and the undoped GaAs to decrease the separation of the electrons and ionized donor impurities,and increased the coulomb attraction. ( )
IMPATT,i.e. IMPact Avanlanche Transit-Time diode, provides the lowest continuous output power of all the semiconductor microwave devices. ( )
Darlington pair can increase the effective current gain. ( )
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