题目内容

In a npn bipolar transistor, for the emitter injection efficiency to be close to unity, the emitter doping must be ( ) compared to the base doping.

A. large
B. small
C. same
D. proportional

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The modes of operation of a npn bipolar transistor are ( ).

A. forward-active
B. cut-off
C. reverse-active
D. saturation

The basic working principle of bipolar transistor is that the collector current is controlled by the ( ) voltage.

A. base–collector
B. collector–emitter
C. base–emitter
D. base–ground

Schottky-clamped transistor is a normal npn bipolar device with a Schottky diode connected between ( ) and ( ).

A. base;collector
B. base;emitter
C. collector;emitter
D. ground;base

For the ideal C-V characteristics of the MOS capacitor, three operation conditions are ( ).

Accumulation
B. Depletion
C. Turn-on
D. Inversion