题目内容
We are interested in calculating currents in the bipolar transistor that, as in the simple pn junction, are determined by the diffusion of ________.
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In cutoff, the minority carrier concentrations are zero at each space charge edge. The base is narrow compared with the minority carrier diffusion length. All minority carriers are swept out of the base region. ()
In saturation, excess minority carriers exist at the edge of each space charge region. No gradient will exist in the minority carrier electron concentration in the base.
The common-base current gain is defined as the ratio of ______ current to _____ current.
The recombination factor is a function of the B–E voltage. As B–E voltage increases, the recombination current becomes less dominant and the recombination factor approaches unit. ()
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