The common-base current gain is defined as the ratio of ______ current to _____ current.
A. base;emitter
B. emitter;collector
C. collector;base
D. collector;emitter
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The recombination factor is a function of the B–E voltage. As B–E voltage increases, the recombination current becomes less dominant and the recombination factor approaches unit. ()
The ideal characteristics of a bipolar transistor are based on the conditions including _______
A. uniformly doped regions and low injection
B. constant emitter and base widths
C. an ideal constant energy bandgap
D. uniform current densities and junctions that are not in breakdown
As the concentration of impurity donor atoms increases, the distance between donor atoms decreases. The splitting of the donor level is caused by the interaction of donor atoms with each other. The discrete donor energy level in an n-type emitter splits into a band of energies. This leads to _________ effective bandgap energy, which then causes the transistor gain to ___________.
A. increased; increase
B. decreased; increase
C. increased; decrease
D. decreased; decrease
The base width modulation effect, or the Early effect means that, a reduction in base width will cause the gradient in the minority carrier concentration to _________, which in turn causes an/a _____________ in the diffusion current.
A. increase; increase
B. decrease; decrease
C. increase; decrease
D. decrease; increase