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In cutoff, the minority carrier concentrations are zero at each space charge edge. The base is narrow compared with the minority carrier diffusion length. All minority carriers are swept out of the base region. ()

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In saturation, excess minority carriers exist at the edge of each space charge region. No gradient will exist in the minority carrier electron concentration in the base.

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The common-base current gain is defined as the ratio of __ current to _ current.

A. base;emitter
B. emitter;collector
C. collector;base
D. collector;emitter

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The recombination factor is a function of the B–E voltage. As B–E voltage increases, the recombination current becomes less dominant and the recombination factor approaches unit. ()

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The ideal characteristics of a bipolar transistor are based on the conditions including _______

A. uniformly doped regions and low injection
B. constant emitter and base widths
C. an ideal constant energy bandgap
D. uniform current densities and junctions that are not in breakdown

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In cutoff, the minority carrier concentrations are zero at each space charge edge. The base is narrow compared with the minority carrier diffusion length. All minority carriers are swept out of the base region. ()

In saturation, excess minority carriers exist at the edge of each space charge region. No gradient will exist in the minority carrier electron concentration in the base.

The common-base current gain is defined as the ratio of ______ current to _____ current.

The recombination factor is a function of the B–E voltage. As B–E voltage increases, the recombination current becomes less dominant and the recombination factor approaches unit. ()

The ideal characteristics of a bipolar transistor are based on the conditions including _______

The common-base current gain is defined as the ratio of __ current to _ current.