题目内容

The threshold voltage shift begins to become apparent for channel widths that are large compared to the ___________.

A. channel length
B. induced space charge width
C. source length
D. drain length

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The threshold voltage can be affected by a reduction in ___________

A. the channel length
B. the channel width
C. either or both of channel length and width
D. none of them

The actual implant dose versus distance is either a delta function or a step function. ()

The snapback breakdown (S-shape) effect of the current–voltage characteristic can be explained by using the parasitic bipolar transistor. ()

The voltage breakdown mechanism includes ___________

A. Oxide breakdown
B. Avalanche Breakdown
C. Near avalanche and snapback breakdown
D. Near punch-through effects

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