The barrier capacitance of P+N junction is mainly affected by the doping concentration of N region. ()
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The ideal current of pn junction is related to ()
A. Reverse saturation current density
B. Applied voltage
C. Temperature
D. Minority carrier concentration
With increasing reverse bias, space charge width keeps ()
A. increase
B. decrease
C. unchanged
D. no relationship
The process whereby electrons and holes are annihilated is called ______ .
( ) is direct bandgap semiconductor.
A. GaAs
B. Si
C. Ge
D. GaP
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