题目内容

( ) is direct bandgap semiconductor.

A. GaAs
B. Si
C. Ge
D. GaP

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In the semiconductor of silicon, the mobility ( ) with the increase of temperature.

A. remain unchanged
B. increase
C. decreases

The Boltzmann approximation can be used when the conditions of ( ) are met.

A. The high electron energy
B. The low doping concentration
C. The ordinary semiconductor
D. The high doping concentration

The concentration of excess minority carrier concentration at the surface is less than that of excess minority carrier in the interior. ( )

Excess hole concentration in the x=0 with the increase of time for zero applied electric field will decrease gradually. ( )