The process whereby electrons and holes are annihilated is called ______ .
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( ) is direct bandgap semiconductor.
A. GaAs
B. Si
C. Ge
D. GaP
In the semiconductor of silicon, the mobility ( ) with the increase of temperature.
A. remain unchanged
B. increase
C. decreases
The Boltzmann approximation can be used when the conditions of ( ) are met.
A. The high electron energy
B. The low doping concentration
C. The ordinary semiconductor
D. The high doping concentration
The concentration of excess minority carrier concentration at the surface is less than that of excess minority carrier in the interior. ( )