The voltage breakdown mechanisms in the semiconductor junctions include ( ) in the MOSFET.
A. oxide breakdown
B. avalanche breakdown
C. near avalanche and snapback breakdown
D. near punch-through effects
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If donor atoms were implanted into the p-type substrate, the space charge density and would be( ); thus, the threshold voltage would shift in the( )voltage direction. Which option is true for the description.( )
A. reduced, negative
B. increased, negative
C. reduced, positive
D. increased, positive
The description ( ) is not right for the short-channel effects.
A. as the channel decreases, the threshold voltage shifts in the negative direction in n-channel MOSFET
B. as the channel decreases, an n-channel MOSFET shifts toward depletion mode
C. as the substrate doping increases, the initial threshold voltage decreases, and the short channel threshold shift becomes larger
D. the short-channel effects on threshold voltage become significant when the channel length becomes less than 2 µm
In the condition ( ), the accumulation condition can be obtained in the MOS device.
A. p-type device, a positive gate bias
B. p-type device, a negative gate bias
C. n-type device, a positive gate bias
D. n-type device, a negative gate bias
In the cases ( ) an inversion layer can be induced in the MOSFET.
A. p-type substrate, a negative voltage applied to the gate
B. p-type substrate, a positive voltage applied to the gate
C. n-type substrate, a negative voltage applied to the gate
D. n-type substrate, a positive voltage applied to the gate
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