题目内容

In the cases ( ) an inversion layer can be induced in the MOSFET.

A. p-type substrate, a negative voltage applied to the gate
B. p-type substrate, a positive voltage applied to the gate
C. n-type substrate, a negative voltage applied to the gate
D. n-type substrate, a positive voltage applied to the gate

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The description ( ) is not right for the characteristics of a MOS capacitor with a p type substrate under low-frequency condition.

A. the flat-band condition occurs between the accumulation and depletion conditions
B. the threshold inversion point occurs between the depletion and inversion conditions
C. the threshold voltage is larger than the flat voltage
D. the inversion layer charge density does not change with the gate voltage in the inversion condition

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The inversion condition can be obtained in the n type MOS device when a negative bias is applied to the gate, inducing a hole space charge region in the semiconductor.( )

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The surface potential changes significantly with gate voltage once the threshold voltage is reached.( )

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The inversion layer charge in the MOS capacitor will not respond to a differential change in capacitor voltage under the high-frequency condition.( )

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In the cases ( ) an inversion layer can be induced in the MOSFET.

A. p-type substrate, a negative voltage applied to the gate B. p-type substrate, a positive voltage applied to the gate C. n-type substrate, a negative voltage applied to the gate D. n-type substrate, a positive voltage applied to the gate

The description ( ) is not right for the characteristics of a MOS capacitor with a p type substrate under low-frequency condition.

The inversion condition can be obtained in the n type MOS device when a negative bias is applied to the gate, inducing a hole space charge region in the semiconductor.( )

The surface potential changes significantly with gate voltage once the threshold voltage is reached.( )

The inversion layer charge in the MOS capacitor will not respond to a differential change in capacitor voltage under the high-frequency condition.( )

A. p-type substrate, a negative voltage applied to the gate
B. p-type substrate, a positive voltage applied to the gate
C. n-type substrate, a negative voltage applied to the gate
D. n-type substrate, a positive voltage applied to the gate