The description ( ) is not right for the short-channel effects.
A. as the channel decreases, the threshold voltage shifts in the negative direction in n-channel MOSFET
B. as the channel decreases, an n-channel MOSFET shifts toward depletion mode
C. as the substrate doping increases, the initial threshold voltage decreases, and the short channel threshold shift becomes larger
D. the short-channel effects on threshold voltage become significant when the channel length becomes less than 2 µm
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In the condition ( ), the accumulation condition can be obtained in the MOS device.
A. p-type device, a positive gate bias
B. p-type device, a negative gate bias
C. n-type device, a positive gate bias
D. n-type device, a negative gate bias
In the cases ( ) an inversion layer can be induced in the MOSFET.
A. p-type substrate, a negative voltage applied to the gate
B. p-type substrate, a positive voltage applied to the gate
C. n-type substrate, a negative voltage applied to the gate
D. n-type substrate, a positive voltage applied to the gate
The description ( ) is not right for the characteristics of a MOS capacitor with a p type substrate under low-frequency condition.
A. the flat-band condition occurs between the accumulation and depletion conditions
B. the threshold inversion point occurs between the depletion and inversion conditions
C. the threshold voltage is larger than the flat voltage
D. the inversion layer charge density does not change with the gate voltage in the inversion condition
The inversion condition can be obtained in the n type MOS device when a negative bias is applied to the gate, inducing a hole space charge region in the semiconductor.( )
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