题目内容

The ideal characteristics of a bipolar transistor are based on the conditions including _______

A. uniformly doped regions and low injection
B. constant emitter and base widths
C. an ideal constant energy bandgap
D. uniform current densities and junctions that are not in breakdown

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As the concentration of impurity donor atoms increases, the distance between donor atoms decreases. The splitting of the donor level is caused by the interaction of donor atoms with each other. The discrete donor energy level in an n-type emitter splits into a band of energies. This leads to _________ effective bandgap energy, which then causes the transistor gain to ___________.

A. increased; increase
B. decreased; increase
C. increased; decrease
D. decreased; decrease

The base width modulation effect, or the Early effect means that, a reduction in base width will cause the gradient in the minority carrier concentration to _________, which in turn causes an/a _____________ in the diffusion current.

A. increase; increase
B. decrease; decrease
C. increase; decrease
D. decrease; increase

To enhance the current crowding effect, power transistors are usually designed with narrow emitter widths and fabricated with an interdigitated design. ( )

Current crowding effect means that, more electrons will be injected _______ than _________, causing the emitter current to be crowded toward ________.

A. in the center; near the emitter edges; the edges
B. in the center; near the emitter edges; the center
C. near the emitter edges; in the center; the center
D. near the emitter edges; in the center; the edges

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