题目内容
The saturation velocity will decrease somewhat with applied VG because of the ________ and __________
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Compared to that in long-channel devices, velocity saturation will be __________in shorter channel devices.
In the long-channel device, the channel length Lis much longer than the mean distance between collisions l, so that an average carrier drift velocity exists. If the channel length is reduced so that L < l, then a large fraction of carriers could travel from the source to the drain without experiencing a scattering event. This motion of carriers is called ______ .
The short-channel threshold shift becomes larger when the substrate doping increases. ()
In actual technology evolution, voltages have not been reduced with the same scaling factor. Electric fields in MOS devices have tended to increase as device dimensions shrink. ()
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