The advantages of the GaAs MESFET include ( ).
A. higher electron mobility,
B. smaller transit time and faster response;
C. decreased parasitic capacitance
D. a simplified fabrication process
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Power MOSFET transistor structures include ( ).
A. DMOS:double-diffused MOS (DMOS) transistor
B. VMOS:vertical channel MOS (VMOS) transistor
C. HEXFET
D. npn bipolar transistor
Two breakdown mechanisms in a bipolar transistor are ( ).
A. punch-through.
B. reverse breakdown
C. avalanche breakdown
D. near avalanche breakdown
In a npn bipolar transistor, for the emitter injection efficiency to be close to unity, the emitter doping must be ( ) compared to the base doping.
A. large
B. small
C. same
D. proportional
The modes of operation of a npn bipolar transistor are ( ).
A. forward-active
B. cut-off
C. reverse-active
D. saturation
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